标准编号：ISO 14701:2011
中文名称：表面化学分析 X射线光电子能谱术 二氧化硅厚度的测量
英文名称：Surface chemical analysis — X-ray photoelectron spectroscopy — Measurement of silicon oxide thickness
发布日期：2011-08
标准范围
This International Standard specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this International Standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.
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