ISO 21820:2021 精细陶瓷（高级陶瓷、高技术陶瓷） 分析多类型硼和氮掺杂SiC晶体的紫外光致发光图像试验方法

标准编号：ISO 21820:2021

中文名称：精细陶瓷（高级陶瓷、高技术陶瓷） 分析多类型硼和氮掺杂SiC晶体的紫外光致发光图像试验方法

英文名称：Fine ceramics (advanced ceramics, advanced technical ceramics) — Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen-doped SiC crystals

发布日期：2021-02

标准范围

This document specifies a test method for determining the polytypes and their ratios in silicon carbide (SiC) wafers or bulk crystals using ultraviolet photoluminescence (UVPL) imaging. The range of SiC is limited to semiconductor SiC doped with nitrogen and boron to have a deep acceptor level and a shallow donor level, respectively. The SiC wafers or bulk crystals discussed in this document typically show electrical resistivities ranging from 10⁻³ohm · cm to 10⁻² ohm · cm, applicable to power electronic devices.
This method is applicable to the SiC-crystal 4H, 6H and 15R polytypes that contain boron and nitrogen as acceptor and donor, respectively, at concentrations that produce donor-acceptor pairs (DAPs) to generate UVPL. In 4H-SiC the boron and nitrogen concentrations typically range from 10¹⁶ cm⁻³ to 10 ¹⁸ cm⁻³ . Semi-insulating SiC is not of concern because it usually contains minimal boron and nitrogen; therefore deep level cannot be achieved.

标准预览图