标准编号:ISO 21466:2019

中文名称:微束分析 扫描电子显微镜 用CD-SEM评价临界尺寸的方法

英文名称:Microbeam analysis — Scanning electron microscopy — Method for evaluating critical dimensions by CD-SEM

发布日期:2019-12

标准范围

This document specifies the structure model with related parameters, file format and fitting procedure 
for characterizing critical dimension (CD) values for wafer and photomask by imaging with a critical 
dimension scanning electron microscope (CD-SEM) by the model-based library (MBL) method. The 
method is applicable to linewidth determination for specimen, such as, gate on wafer, photomask, single 
isolated or dense line feature pattern down to size of 10 nm.

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