ISO 17560:2014 表面化学分析 中等离子光谱法 硅中硼的压型厚度方法

标准编号：ISO 17560:2014

中文名称：表面化学分析 中等离子光谱法 硅中硼的压型厚度方法

英文名称：Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of boron in silicon

发布日期：2014-09

标准范围

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sectoror quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometryor optical interferometry for depth scale calibration. This method is applicable to single-crystal, polycrystal,or amorphous silicon specimens with boron atomic concentrations between 1 × 1016 atoms/cm3and 1 × 1020 atoms/cm3, and to crater depths of 50 nm or deeper.

标准预览图