ISO 12406:2010 表面化学分析 二次离子质谱 硅中砷的深度分布分析法

标准编号：ISO 12406:2010

中文名称：表面化学分析 二次离子质谱 硅中砷的深度分布分析法

英文名称：Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth profiling of arsenic in silicon

发布日期：2010-11

标准范围

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 10 16 atoms/cm3 and 2,5 × 10 21 atoms/cm3, and to crater depths of 50 nm or deeper.

标准预览图