标准编号：ISO 5618-1:2023
中文名称：精细陶瓷（先进陶瓷、高技术陶瓷） GaN晶体表面缺陷的试验方法 第1部分：缺陷分类
英文名称：Fine ceramics (advanced ceramics, advanced technical ceramics) — Test method for GaN crystal surface defects — Part 1: Classification of defects
发布日期：2023-11
标准范围
This document gives a classification of the dislocations and process-induced defects, from among the various surface defects, that occur on single-crystal gallium nitride (GaN) substrates or single-crystal GaN films. It is applicable to the dislocations and process-induced defects exposed on the surface of the following types of GaN substrates or films: — single-crystal GaN substrate; — single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; — single-crystal GaN film formed by heteroepitaxial growth on a single-crystal aluminium oxide (Al O ), silicon carbide (SiC) or silicon (Si) substrate. 2 3 It is not applicable to defects exposed on the surface if the absolute value of the acute angle between the surface normal and the c-axis of GaN is ≥ 8°.
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